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circuitpython/stmhal/hal/f2/src/stm32f2xx_hal_flash_ex.c

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/**
******************************************************************************
* @file stm32f2xx_hal_flash_ex.c
* @author MCD Application Team
* @version V1.0.1
* @date 25-March-2014
* @brief Extended FLASH HAL module driver.
* This file provides firmware functions to manage the following
* functionalities of the FLASH extension peripheral:
* + Extended programming operations functions
*
@verbatim
==============================================================================
##### Flash Extension features #####
==============================================================================
##### How to use this driver #####
==============================================================================
[..] This driver provides functions to configure and program the FLASH memory
of all STM32F2xx devices. It includes
(#) FLASH Memory Erase functions:
(++) Lock and Unlock the FLASH interface using HAL_FLASH_Unlock() and
HAL_FLASH_Lock() functions
(++) Erase function: Erase sector, erase all sectors
(++) There is two mode of erase :
(+++) Polling Mode using HAL_FLASHEx_Erase()
(+++) Interrupt Mode using HAL_FLASHEx_Erase_IT()
(#) Option Bytes Programming functions: Use HAL_FLASHEx_OBProgram() to :
(++) Set/Reset the write protection
(++) Set the Read protection Level
(++) Set the BOR level
(++) Program the user Option Bytes
@endverbatim
******************************************************************************
* @attention
*
* <h2><center>&copy; COPYRIGHT(c) 2014 STMicroelectronics</center></h2>
*
* Redistribution and use in source and binary forms, with or without modification,
* are permitted provided that the following conditions are met:
* 1. Redistributions of source code must retain the above copyright notice,
* this list of conditions and the following disclaimer.
* 2. Redistributions in binary form must reproduce the above copyright notice,
* this list of conditions and the following disclaimer in the documentation
* and/or other materials provided with the distribution.
* 3. Neither the name of STMicroelectronics nor the names of its contributors
* may be used to endorse or promote products derived from this software
* without specific prior written permission.
*
* THIS SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS"
* AND ANY EXPRESS OR IMPLIED WARRANTIES, INCLUDING, BUT NOT LIMITED TO, THE
* IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE ARE
* DISCLAIMED. IN NO EVENT SHALL THE COPYRIGHT HOLDER OR CONTRIBUTORS BE LIABLE
* FOR ANY DIRECT, INDIRECT, INCIDENTAL, SPECIAL, EXEMPLARY, OR CONSEQUENTIAL
* DAMAGES (INCLUDING, BUT NOT LIMITED TO, PROCUREMENT OF SUBSTITUTE GOODS OR
* SERVICES; LOSS OF USE, DATA, OR PROFITS; OR BUSINESS INTERRUPTION) HOWEVER
* CAUSED AND ON ANY THEORY OF LIABILITY, WHETHER IN CONTRACT, STRICT LIABILITY,
* OR TORT (INCLUDING NEGLIGENCE OR OTHERWISE) ARISING IN ANY WAY OUT OF THE USE
* OF THIS SOFTWARE, EVEN IF ADVISED OF THE POSSIBILITY OF SUCH DAMAGE.
*
******************************************************************************
*/
/* Includes ------------------------------------------------------------------*/
#include "stm32f2xx_hal.h"
/** @addtogroup STM32F2xx_HAL_Driver
* @{
*/
/** @defgroup FLASHEx
* @brief FLASH HAL Extension module driver
* @{
*/
#ifdef HAL_FLASH_MODULE_ENABLED
/* Private typedef -----------------------------------------------------------*/
/* Private define ------------------------------------------------------------*/
#define SECTOR_MASK ((uint32_t)0xFFFFFF07)
#define HAL_FLASH_TIMEOUT_VALUE ((uint32_t)50000)/* 50 s */
/* Private macro -------------------------------------------------------------*/
/* Private variables ---------------------------------------------------------*/
extern FLASH_ProcessTypeDef pFlash;
/* Private function prototypes -----------------------------------------------*/
/* Option bytes control */
static void FLASH_MassErase(uint8_t VoltageRange);
static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector);
static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector);
static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level);
static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby);
static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level);
static uint8_t FLASH_OB_GetUser(void);
static uint16_t FLASH_OB_GetWRP(void);
static FlagStatus FLASH_OB_GetRDP(void);
static uint8_t FLASH_OB_GetBOR(void);
/* Private functions ---------------------------------------------------------*/
extern HAL_StatusTypeDef FLASH_WaitForLastOperation(uint32_t Timeout);
/** @defgroup FLASHEx_Private_Functions Extended FLASH Private functions
* @{
*/
/** @defgroup FLASHEx_Group1 Extended IO operation functions
* @brief Extended IO operation functions
*
@verbatim
===============================================================================
##### Extended programming operation functions #####
===============================================================================
[..]
This subsection provides a set of functions allowing to manage the Extension FLASH
programming operations Operations.
@endverbatim
* @{
*/
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors
* @param[in] pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @param[out] SectorError: pointer to variable that
* contains the configuration information on faulty sector in case of error
* (0xFFFFFFFF means that all the sectors have been correctly erased)
*
* @retval HAL_StatusTypeDef HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError)
{
HAL_StatusTypeDef status = HAL_ERROR;
uint32_t index = 0;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_TYPEERASE(pEraseInit->TypeErase));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
if (status == HAL_OK)
{
/*Initialization of SectorError variable*/
*SectorError = 0xFFFFFFFF;
if (pEraseInit->TypeErase == TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
FLASH_MassErase((uint8_t) pEraseInit->VoltageRange);
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
/* if the erase operation is completed, disable the MER Bit */
FLASH->CR &= (~FLASH_CR_MER);
}
else
{
/* Check the parameters */
assert_param(IS_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
/* Erase by sector by sector to be done*/
for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++)
{
FLASH_Erase_Sector(index, (uint8_t) pEraseInit->VoltageRange);
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
/* If the erase operation is completed, disable the SER Bit */
FLASH->CR &= (~FLASH_CR_SER);
FLASH->CR &= SECTOR_MASK;
if (status != HAL_OK)
{
/* In case of error, stop erase procedure and return the faulty sector*/
*SectorError = index;
break;
}
}
}
}
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
/**
* @brief Perform a mass erase or erase the specified FLASH memory sectors with interrupt enabled
* @param pEraseInit: pointer to an FLASH_EraseInitTypeDef structure that
* contains the configuration information for the erasing.
*
* @retval HAL_StatusTypeDef HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
{
HAL_StatusTypeDef status = HAL_OK;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_TYPEERASE(pEraseInit->TypeErase));
/* Enable End of FLASH Operation interrupt */
__HAL_FLASH_ENABLE_IT(FLASH_IT_EOP);
/* Enable Error source interrupt */
__HAL_FLASH_ENABLE_IT(FLASH_IT_ERR);
/* Clear pending flags (if any) */
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |\
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR| FLASH_FLAG_PGSERR);
if (pEraseInit->TypeErase == TYPEERASE_MASSERASE)
{
/*Mass erase to be done*/
pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE;
FLASH_MassErase((uint8_t) pEraseInit->VoltageRange);
}
else
{
/* Erase by sector to be done*/
/* Check the parameters */
assert_param(IS_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));
pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE;
pFlash.NbSectorsToErase = pEraseInit->NbSectors;
pFlash.Sector = pEraseInit->Sector;
pFlash.VoltageForErase = (uint8_t)pEraseInit->VoltageRange;
/*Erase 1st sector and wait for IT*/
FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->VoltageRange);
}
return status;
}
/**
* @brief Program option bytes
* @param pOBInit: pointer to an FLASH_OBInitStruct structure that
* contains the configuration information for the programming.
*
* @retval HAL_StatusTypeDef HAL Status
*/
HAL_StatusTypeDef HAL_FLASHEx_OBProgram(FLASH_OBProgramInitTypeDef *pOBInit)
{
HAL_StatusTypeDef status = HAL_ERROR;
/* Process Locked */
__HAL_LOCK(&pFlash);
/* Check the parameters */
assert_param(IS_OPTIONBYTE(pOBInit->OptionType));
/*Write protection configuration*/
if((pOBInit->OptionType & OPTIONBYTE_WRP) == OPTIONBYTE_WRP)
{
assert_param(IS_WRPSTATE(pOBInit->WRPState));
if (pOBInit->WRPState == WRPSTATE_ENABLE)
{
/*Enable of Write protection on the selected Sector*/
status = FLASH_OB_EnableWRP(pOBInit->WRPSector);
}
else
{
/*Disable of Write protection on the selected Sector*/
status = FLASH_OB_DisableWRP(pOBInit->WRPSector);
}
}
/*Read protection configuration*/
if((pOBInit->OptionType & OPTIONBYTE_RDP) == OPTIONBYTE_RDP)
{
status = FLASH_OB_RDP_LevelConfig(pOBInit->RDPLevel);
}
/*USER configuration*/
if((pOBInit->OptionType & OPTIONBYTE_USER) == OPTIONBYTE_USER)
{
status = FLASH_OB_UserConfig(pOBInit->USERConfig&OB_IWDG_SW,
pOBInit->USERConfig&OB_STOP_NO_RST,
pOBInit->USERConfig&OB_STDBY_NO_RST);
}
/*BOR Level configuration*/
if((pOBInit->OptionType & OPTIONBYTE_BOR) == OPTIONBYTE_BOR)
{
status = FLASH_OB_BOR_LevelConfig(pOBInit->BORLevel);
}
/* Process Unlocked */
__HAL_UNLOCK(&pFlash);
return status;
}
/**
* @brief Get the Option byte configuration
* @param pOBInit: pointer to an FLASH_OBInitStruct structure that
* contains the configuration information for the programming.
*
* @retval None
*/
void HAL_FLASHEx_OBGetConfig(FLASH_OBProgramInitTypeDef *pOBInit)
{
pOBInit->OptionType = OPTIONBYTE_WRP | OPTIONBYTE_RDP | OPTIONBYTE_USER | OPTIONBYTE_BOR;
/*Get WRP*/
pOBInit->WRPSector = FLASH_OB_GetWRP();
/*Get RDP Level*/
pOBInit->RDPLevel = FLASH_OB_GetRDP();
/*Get USER*/
pOBInit->USERConfig = FLASH_OB_GetUser();
/*Get BOR Level*/
pOBInit->BORLevel = FLASH_OB_GetBOR();
}
/**
* @brief Mass erase of FLASH memory
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @retval None
*/
static void FLASH_MassErase(uint8_t VoltageRange)
{
uint32_t tmp_psize = 0;
/* Check the parameters */
assert_param(IS_VOLTAGERANGE(VoltageRange));
/* if the previous operation is completed, proceed to erase all sectors */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= tmp_psize;
FLASH->CR |= FLASH_CR_MER;
FLASH->CR |= FLASH_CR_STRT;
}
/**
* @brief Erase the specified FLASH memory sector
* @param Sector: FLASH sector to erase
* The value of this parameter depend on device used within the same series
* @param VoltageRange: The device voltage range which defines the erase parallelism.
* This parameter can be one of the following values:
* @arg VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V,
* the operation will be done by byte (8-bit)
* @arg VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
* the operation will be done by half word (16-bit)
* @arg VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
* the operation will be done by word (32-bit)
* @arg VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp,
* the operation will be done by double word (64-bit)
*
* @retval None
*/
void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
{
uint32_t tmp_psize = 0;
/* Check the parameters */
assert_param(IS_FLASH_SECTOR(Sector));
assert_param(IS_VOLTAGERANGE(VoltageRange));
if(VoltageRange == VOLTAGE_RANGE_1)
{
tmp_psize = FLASH_PSIZE_BYTE;
}
else if(VoltageRange == VOLTAGE_RANGE_2)
{
tmp_psize = FLASH_PSIZE_HALF_WORD;
}
else if(VoltageRange == VOLTAGE_RANGE_3)
{
tmp_psize = FLASH_PSIZE_WORD;
}
else
{
tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
}
/* Need to add offset of 4 when sector higher than FLASH_SECTOR_11 */
if (Sector > FLASH_SECTOR_11)
{
Sector += 4;
}
/* If the previous operation is completed, proceed to erase the sector */
FLASH->CR &= CR_PSIZE_MASK;
FLASH->CR |= tmp_psize;
FLASH->CR &= SECTOR_MASK;
FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
FLASH->CR |= FLASH_CR_STRT;
}
/**
* @brief Enable the write protection of the desired sectors
*
* @note When the memory read protection level is selected (RDP level = 1),
* it is not possible to program or erase the flash sector i if CortexM3
* debug features are connected or boot code is executed in RAM, even if nWRPi = 1
*
* @param WRPSector: specifies the sector(s) to be write protected.
* The value of this parameter depend on device used within the same series
* @retval HAL_StatusTypeDef HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector)
{
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_WRP_SECTOR(WRPSector));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
*(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector);
}
return status;
}
/**
* @brief Disable the write protection of the desired sectors
*
* @note When the memory read protection level is selected (RDP level = 1),
* it is not possible to program or erase the flash sector if CortexM3
* debug features are connected or boot code is executed in RAM, even if nWRPi = 1
*
* @param WRPSector: specifies the sector(s) to be write protected.
* The value of this parameter depend on device used within the same series
*
*
* @retval HAL_StatusTypeDef HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector)
{
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_WRP_SECTOR(WRPSector));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
*(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector;
}
return status;
}
/**
* @brief Set the read protection level.
* @param Level: specifies the read protection level.
* This parameter can be one of the following values:
* @arg OB_RDP_LEVEL_0: No protection
* @arg OB_RDP_LEVEL_1: Read protection of the memory
* @arg OB_RDP_LEVEL_2: Full chip protection
*
* @note WARNING: When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0
*
* @retval HAL_StatusTypeDef HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level)
{
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_RDP_LEVEL(Level));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
*(__IO uint8_t*)OPTCR_BYTE1_ADDRESS = Level;
}
return status;
}
/**
* @brief Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY.
* @param Iwdg: Selects the IWDG mode
* This parameter can be one of the following values:
* @arg OB_IWDG_SW: Software IWDG selected
* @arg OB_IWDG_HW: Hardware IWDG selected
* @param Stop: Reset event when entering STOP mode.
* This parameter can be one of the following values:
* @arg OB_STOP_NO_RST: No reset generated when entering in STOP
* @arg OB_STOP_RST: Reset generated when entering in STOP
* @param Stdby: Reset event when entering Standby mode.
* This parameter can be one of the following values:
* @arg OB_STDBY_NO_RST: No reset generated when entering in STANDBY
* @arg OB_STDBY_RST: Reset generated when entering in STANDBY
* @retval HAL_StatusTypeDef HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby)
{
uint8_t optiontmp = 0xFF;
HAL_StatusTypeDef status = HAL_OK;
/* Check the parameters */
assert_param(IS_OB_IWDG_SOURCE(Iwdg));
assert_param(IS_OB_STOP_SOURCE(Stop));
assert_param(IS_OB_STDBY_SOURCE(Stdby));
/* Wait for last operation to be completed */
status = FLASH_WaitForLastOperation((uint32_t)HAL_FLASH_TIMEOUT_VALUE);
if(status == HAL_OK)
{
/* Mask OPTLOCK, OPTSTRT, BOR_LEV and BFB2 bits */
optiontmp = (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x1F);
/* Update User Option Byte */
*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS = Iwdg | (uint8_t)(Stdby | (uint8_t)(Stop | ((uint8_t)optiontmp)));
}
return status;
}
/**
* @brief Set the BOR Level.
* @param Level: specifies the Option Bytes BOR Reset Level.
* This parameter can be one of the following values:
* @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
* @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
* @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
* @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V
* @retval HAL_StatusTypeDef HAL Status
*/
static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level)
{
/* Check the parameters */
assert_param(IS_OB_BOR_LEVEL(Level));
/* Set the BOR Level */
*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BOR_LEV);
*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= Level;
return HAL_OK;
}
/**
* @brief Return the FLASH User Option Byte value.
* @param None
* @retval uint8_t FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1)
* and RST_STDBY(Bit2).
*/
static uint8_t FLASH_OB_GetUser(void)
{
/* Return the User Option Byte */
return ((uint8_t)(FLASH->OPTCR & 0xE0));
}
/**
* @brief Return the FLASH Write Protection Option Bytes value.
* @param None
* @retval uint16_t FLASH Write Protection Option Bytes value
*/
static uint16_t FLASH_OB_GetWRP(void)
{
/* Return the FLASH write protection Register value */
return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
}
/**
* @brief Returns the FLASH Read Protection level.
* @param None
* @retval FlagStatus FLASH ReadOut Protection Status:
* - SET, when OB_RDP_Level_1 or OB_RDP_Level_2 is set
* - RESET, when OB_RDP_Level_0 is set
*/
static FlagStatus FLASH_OB_GetRDP(void)
{
FlagStatus readstatus = RESET;
if ((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) != (uint8_t)OB_RDP_LEVEL_0))
{
readstatus = SET;
}
return readstatus;
}
/**
* @brief Returns the FLASH BOR level.
* @param None
* @retval uint8_t The FLASH BOR level:
* - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
* - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
* - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
* - OB_BOR_OFF : Supply voltage ranges from 1.62 to 2.1 V
*/
static uint8_t FLASH_OB_GetBOR(void)
{
/* Return the FLASH BOR level */
return (uint8_t)(*(__IO uint8_t *)(OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0C);
}
/**
* @}
*/
#endif /* HAL_FLASH_MODULE_ENABLED */
/**
* @}
*/
/**
* @}
*/
/************************ (C) COPYRIGHT STMicroelectronics *****END OF FILE****/
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