circuitpython/stmhal/flash.c

199 lines
7.6 KiB
C

/*
* This file is part of the Micro Python project, http://micropython.org/
*
* The MIT License (MIT)
*
* Copyright (c) 2013, 2014 Damien P. George
*
* Permission is hereby granted, free of charge, to any person obtaining a copy
* of this software and associated documentation files (the "Software"), to deal
* in the Software without restriction, including without limitation the rights
* to use, copy, modify, merge, publish, distribute, sublicense, and/or sell
* copies of the Software, and to permit persons to whom the Software is
* furnished to do so, subject to the following conditions:
*
* The above copyright notice and this permission notice shall be included in
* all copies or substantial portions of the Software.
*
* THE SOFTWARE IS PROVIDED "AS IS", WITHOUT WARRANTY OF ANY KIND, EXPRESS OR
* IMPLIED, INCLUDING BUT NOT LIMITED TO THE WARRANTIES OF MERCHANTABILITY,
* FITNESS FOR A PARTICULAR PURPOSE AND NONINFRINGEMENT. IN NO EVENT SHALL THE
* AUTHORS OR COPYRIGHT HOLDERS BE LIABLE FOR ANY CLAIM, DAMAGES OR OTHER
* LIABILITY, WHETHER IN AN ACTION OF CONTRACT, TORT OR OTHERWISE, ARISING FROM,
* OUT OF OR IN CONNECTION WITH THE SOFTWARE OR THE USE OR OTHER DEALINGS IN
* THE SOFTWARE.
*/
#include STM32_HAL_H
#include "flash.h"
/* Base address of the Flash sectors */
#define ADDR_FLASH_SECTOR_0 ((uint32_t)0x08000000) /* Base @ of Sector 0, 16 Kbytes */
#define ADDR_FLASH_SECTOR_1 ((uint32_t)0x08004000) /* Base @ of Sector 1, 16 Kbytes */
#define ADDR_FLASH_SECTOR_2 ((uint32_t)0x08008000) /* Base @ of Sector 2, 16 Kbytes */
#define ADDR_FLASH_SECTOR_3 ((uint32_t)0x0800C000) /* Base @ of Sector 3, 16 Kbytes */
#define ADDR_FLASH_SECTOR_4 ((uint32_t)0x08010000) /* Base @ of Sector 4, 64 Kbytes */
#define ADDR_FLASH_SECTOR_5 ((uint32_t)0x08020000) /* Base @ of Sector 5, 128 Kbytes */
#define ADDR_FLASH_SECTOR_6 ((uint32_t)0x08040000) /* Base @ of Sector 6, 128 Kbytes */
#define ADDR_FLASH_SECTOR_7 ((uint32_t)0x08060000) /* Base @ of Sector 7, 128 Kbytes */
#if defined(FLASH_SECTOR_8)
#define ADDR_FLASH_SECTOR_8 ((uint32_t)0x08080000) /* Base @ of Sector 8, 128 Kbytes */
#define ADDR_FLASH_SECTOR_9 ((uint32_t)0x080A0000) /* Base @ of Sector 9, 128 Kbytes */
#define ADDR_FLASH_SECTOR_10 ((uint32_t)0x080C0000) /* Base @ of Sector 10, 128 Kbytes */
#define ADDR_FLASH_SECTOR_11 ((uint32_t)0x080E0000) /* Base @ of Sector 11, 128 Kbytes */
#endif
static const uint32_t flash_info_table[26] = {
ADDR_FLASH_SECTOR_0, FLASH_SECTOR_0,
ADDR_FLASH_SECTOR_1, FLASH_SECTOR_1,
ADDR_FLASH_SECTOR_2, FLASH_SECTOR_2,
ADDR_FLASH_SECTOR_3, FLASH_SECTOR_3,
ADDR_FLASH_SECTOR_4, FLASH_SECTOR_4,
ADDR_FLASH_SECTOR_5, FLASH_SECTOR_5,
ADDR_FLASH_SECTOR_6, FLASH_SECTOR_6,
ADDR_FLASH_SECTOR_7, FLASH_SECTOR_7,
#if defined(FLASH_SECTOR_8)
ADDR_FLASH_SECTOR_8, FLASH_SECTOR_8,
ADDR_FLASH_SECTOR_9, FLASH_SECTOR_9,
ADDR_FLASH_SECTOR_10, FLASH_SECTOR_10,
ADDR_FLASH_SECTOR_11, FLASH_SECTOR_11,
ADDR_FLASH_SECTOR_11 + 0x20000, 0,
#else
ADDR_FLASH_SECTOR_7 + 0x20000, 0,
#endif
};
uint32_t flash_get_sector_info(uint32_t addr, uint32_t *start_addr, uint32_t *size) {
if (addr >= flash_info_table[0]) {
for (int i = 0; i < 24; i += 2) {
if (addr < flash_info_table[i + 2]) {
if (start_addr != NULL) {
*start_addr = flash_info_table[i];
}
if (size != NULL) {
*size = flash_info_table[i + 2] - flash_info_table[i];
}
return flash_info_table[i + 1];
}
}
}
return 0;
}
void flash_erase(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
// check there is something to write
if (num_word32 == 0) {
return;
}
// unlock
HAL_FLASH_Unlock();
// Clear pending flags (if any)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
// erase the sector(s)
FLASH_EraseInitTypeDef EraseInitStruct;
EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
uint32_t SectorError = 0;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SectorError) != HAL_OK) {
// error occurred during sector erase
HAL_FLASH_Lock(); // lock the flash
return;
}
}
/*
// erase the sector using an interrupt
void flash_erase_it(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
// check there is something to write
if (num_word32 == 0) {
return;
}
// unlock
HAL_FLASH_Unlock();
// Clear pending flags (if any)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
// erase the sector(s)
FLASH_EraseInitTypeDef EraseInitStruct;
EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
if (HAL_FLASHEx_Erase_IT(&EraseInitStruct) != HAL_OK) {
// error occurred during sector erase
HAL_FLASH_Lock(); // lock the flash
return;
}
}
*/
void flash_write(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
// program the flash word by word
for (int i = 0; i < num_word32; i++) {
if (HAL_FLASH_Program(TYPEPROGRAM_WORD, flash_dest, *src) != HAL_OK) {
// error occurred during flash write
HAL_FLASH_Lock(); // lock the flash
return;
}
flash_dest += 4;
src += 1;
}
// lock the flash
HAL_FLASH_Lock();
}
/*
use erase, then write
void flash_erase_and_write(uint32_t flash_dest, const uint32_t *src, uint32_t num_word32) {
// check there is something to write
if (num_word32 == 0) {
return;
}
// unlock
HAL_FLASH_Unlock();
// Clear pending flags (if any)
__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |
FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR);
// erase the sector(s)
FLASH_EraseInitTypeDef EraseInitStruct;
EraseInitStruct.TypeErase = TYPEERASE_SECTORS;
EraseInitStruct.VoltageRange = VOLTAGE_RANGE_3; // voltage range needs to be 2.7V to 3.6V
EraseInitStruct.Sector = flash_get_sector_info(flash_dest, NULL, NULL);
EraseInitStruct.NbSectors = flash_get_sector_info(flash_dest + 4 * num_word32 - 1, NULL, NULL) - EraseInitStruct.Sector + 1;
uint32_t SectorError = 0;
if (HAL_FLASHEx_Erase(&EraseInitStruct, &SectorError) != HAL_OK) {
// error occurred during sector erase
HAL_FLASH_Lock(); // lock the flash
return;
}
// program the flash word by word
for (int i = 0; i < num_word32; i++) {
if (HAL_FLASH_Program(TYPEPROGRAM_WORD, flash_dest, *src) != HAL_OK) {
// error occurred during flash write
HAL_FLASH_Lock(); // lock the flash
return;
}
flash_dest += 4;
src += 1;
}
// lock the flash
HAL_FLASH_Lock();
}
*/