circuitpython/ports/stm32/flashbdev.c

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/*
* This file is part of the MicroPython project, http://micropython.org/
*
* The MIT License (MIT)
*
* Copyright (c) 2013-2018 Damien P. George
*
* Permission is hereby granted, free of charge, to any person obtaining a copy
* of this software and associated documentation files (the "Software"), to deal
* in the Software without restriction, including without limitation the rights
* to use, copy, modify, merge, publish, distribute, sublicense, and/or sell
* copies of the Software, and to permit persons to whom the Software is
* furnished to do so, subject to the following conditions:
*
* The above copyright notice and this permission notice shall be included in
* all copies or substantial portions of the Software.
*
* THE SOFTWARE IS PROVIDED "AS IS", WITHOUT WARRANTY OF ANY KIND, EXPRESS OR
* IMPLIED, INCLUDING BUT NOT LIMITED TO THE WARRANTIES OF MERCHANTABILITY,
* FITNESS FOR A PARTICULAR PURPOSE AND NONINFRINGEMENT. IN NO EVENT SHALL THE
* AUTHORS OR COPYRIGHT HOLDERS BE LIABLE FOR ANY CLAIM, DAMAGES OR OTHER
* LIABILITY, WHETHER IN AN ACTION OF CONTRACT, TORT OR OTHERWISE, ARISING FROM,
* OUT OF OR IN CONNECTION WITH THE SOFTWARE OR THE USE OR OTHER DEALINGS IN
* THE SOFTWARE.
*/
#include <stdint.h>
#include <string.h>
#include "py/obj.h"
#include "py/mperrno.h"
#include "led.h"
#include "flash.h"
#include "storage.h"
#if MICROPY_HW_ENABLE_INTERNAL_FLASH_STORAGE
// Here we try to automatically configure the location and size of the flash
// pages to use for the internal storage. We also configure the location of the
// cache used for writing.
#if defined(STM32F405xx) || defined(STM32F415xx) || defined(STM32F407xx)
#define CACHE_MEM_START_ADDR (0x10000000) // CCM data RAM, 64k
#define FLASH_SECTOR_SIZE_MAX (0x10000) // 64k max, size of CCM
#define FLASH_MEM_SEG1_START_ADDR (0x08004000) // sector 1
#define FLASH_MEM_SEG1_NUM_BLOCKS (224) // sectors 1,2,3,4: 16k+16k+16k+64k=112k
// enable this to get an extra 64k of storage (uses the last sector of the flash)
#if 0
#define FLASH_MEM_SEG2_START_ADDR (0x080e0000) // sector 11
#define FLASH_MEM_SEG2_NUM_BLOCKS (128) // sector 11: 128k
#endif
#elif defined(STM32F401xE) || defined(STM32F411xE) || defined(STM32F446xx)
STATIC byte flash_cache_mem[0x4000] __attribute__((aligned(4))); // 16k
#define CACHE_MEM_START_ADDR (&flash_cache_mem[0])
#define FLASH_SECTOR_SIZE_MAX (0x4000) // 16k max due to size of cache buffer
#define FLASH_MEM_SEG1_START_ADDR (0x08004000) // sector 1
#define FLASH_MEM_SEG1_NUM_BLOCKS (128) // sectors 1,2,3,4: 16k+16k+16k+16k(of 64k)=64k
#elif defined(STM32F429xx)
#define CACHE_MEM_START_ADDR (0x10000000) // CCM data RAM, 64k
#define FLASH_SECTOR_SIZE_MAX (0x10000) // 64k max, size of CCM
#define FLASH_MEM_SEG1_START_ADDR (0x08004000) // sector 1
#define FLASH_MEM_SEG1_NUM_BLOCKS (224) // sectors 1,2,3,4: 16k+16k+16k+64k=112k
#elif defined(STM32F439xx)
#define CACHE_MEM_START_ADDR (0x10000000) // CCM data RAM, 64k
#define FLASH_SECTOR_SIZE_MAX (0x10000) // 64k max, size of CCM
#define FLASH_MEM_SEG1_START_ADDR (0x08100000) // sector 12
#define FLASH_MEM_SEG1_NUM_BLOCKS (384) // sectors 12,13,14,15,16,17: 16k+16k+16k+16k+64k+64k(of 128k)=192k
#define FLASH_MEM_SEG2_START_ADDR (0x08140000) // sector 18
#define FLASH_MEM_SEG2_NUM_BLOCKS (128) // sector 18: 64k(of 128k)
#elif defined(STM32F746xx) || defined(STM32F767xx) || defined(STM32F769xx)
// The STM32F746 doesn't really have CCRAM, so we use the 64K DTCM for this.
#define CACHE_MEM_START_ADDR (0x20000000) // DTCM data RAM, 64k
#define FLASH_SECTOR_SIZE_MAX (0x08000) // 32k max
#define FLASH_MEM_SEG1_START_ADDR (0x08008000) // sector 1
#define FLASH_MEM_SEG1_NUM_BLOCKS (192) // sectors 1,2,3: 32k+32k+32=96k
#elif defined(STM32H743xx)
// The STM32H743 flash sectors are 128K
#define CACHE_MEM_START_ADDR (0x20000000) // DTCM data RAM, 128k
#define FLASH_SECTOR_SIZE_MAX (0x20000) // 128k max
#define FLASH_MEM_SEG1_START_ADDR (0x08020000) // sector 1
#define FLASH_MEM_SEG1_NUM_BLOCKS (256) // Sector 1: 128k / 512b = 256 blocks
2018-05-18 03:03:53 -04:00
#elif defined(STM32L475xx) || defined(STM32L476xx) || defined(STM32L496xx)
// The STM32L475/6 doesn't have CCRAM, so we use the 32K SRAM2 for this, although
// actual location and size is defined by the linker script.
extern uint8_t _flash_fs_start;
extern uint8_t _flash_fs_end;
extern uint8_t _ram_fs_cache_start[]; // size determined by linker file
extern uint8_t _ram_fs_cache_end[];
#define CACHE_MEM_START_ADDR ((uintptr_t)&_ram_fs_cache_start[0])
#define FLASH_SECTOR_SIZE_MAX (&_ram_fs_cache_end[0] - &_ram_fs_cache_start[0]) // 2k max
#define FLASH_MEM_SEG1_START_ADDR ((long)&_flash_fs_start)
#define FLASH_MEM_SEG1_NUM_BLOCKS ((&_flash_fs_end - &_flash_fs_start) / 512)
#else
#error "no internal flash storage support for this MCU"
#endif
#if !defined(FLASH_MEM_SEG2_START_ADDR)
#define FLASH_MEM_SEG2_START_ADDR (0) // no second segment
#define FLASH_MEM_SEG2_NUM_BLOCKS (0) // no second segment
#endif
#define FLASH_FLAG_DIRTY (1)
#define FLASH_FLAG_FORCE_WRITE (2)
#define FLASH_FLAG_ERASED (4)
static __IO uint8_t flash_flags = 0;
static uint32_t flash_cache_sector_id;
static uint32_t flash_cache_sector_start;
static uint32_t flash_cache_sector_size;
static uint32_t flash_tick_counter_last_write;
static void flash_bdev_irq_handler(void);
int32_t flash_bdev_ioctl(uint32_t op, uint32_t arg) {
(void)arg;
switch (op) {
case BDEV_IOCTL_INIT:
flash_flags = 0;
flash_cache_sector_id = 0;
flash_tick_counter_last_write = 0;
return 0;
case BDEV_IOCTL_NUM_BLOCKS:
return FLASH_MEM_SEG1_NUM_BLOCKS + FLASH_MEM_SEG2_NUM_BLOCKS;
case BDEV_IOCTL_IRQ_HANDLER:
flash_bdev_irq_handler();
return 0;
case BDEV_IOCTL_SYNC:
if (flash_flags & FLASH_FLAG_DIRTY) {
flash_flags |= FLASH_FLAG_FORCE_WRITE;
while (flash_flags & FLASH_FLAG_DIRTY) {
NVIC->STIR = FLASH_IRQn;
}
}
return 0;
}
return -MP_EINVAL;
}
static uint8_t *flash_cache_get_addr_for_write(uint32_t flash_addr) {
uint32_t flash_sector_start;
uint32_t flash_sector_size;
uint32_t flash_sector_id = flash_get_sector_info(flash_addr, &flash_sector_start, &flash_sector_size);
if (flash_sector_size > FLASH_SECTOR_SIZE_MAX) {
flash_sector_size = FLASH_SECTOR_SIZE_MAX;
}
if (flash_cache_sector_id != flash_sector_id) {
flash_bdev_ioctl(BDEV_IOCTL_SYNC, 0);
memcpy((void*)CACHE_MEM_START_ADDR, (const void*)flash_sector_start, flash_sector_size);
flash_cache_sector_id = flash_sector_id;
flash_cache_sector_start = flash_sector_start;
flash_cache_sector_size = flash_sector_size;
}
flash_flags |= FLASH_FLAG_DIRTY;
led_state(PYB_LED_RED, 1); // indicate a dirty cache with LED on
flash_tick_counter_last_write = HAL_GetTick();
return (uint8_t*)CACHE_MEM_START_ADDR + flash_addr - flash_sector_start;
}
static uint8_t *flash_cache_get_addr_for_read(uint32_t flash_addr) {
uint32_t flash_sector_start;
uint32_t flash_sector_size;
uint32_t flash_sector_id = flash_get_sector_info(flash_addr, &flash_sector_start, &flash_sector_size);
if (flash_cache_sector_id == flash_sector_id) {
// in cache, copy from there
return (uint8_t*)CACHE_MEM_START_ADDR + flash_addr - flash_sector_start;
}
// not in cache, copy straight from flash
return (uint8_t*)flash_addr;
}
static uint32_t convert_block_to_flash_addr(uint32_t block) {
if (block < FLASH_MEM_SEG1_NUM_BLOCKS) {
return FLASH_MEM_SEG1_START_ADDR + block * FLASH_BLOCK_SIZE;
}
if (block < FLASH_MEM_SEG1_NUM_BLOCKS + FLASH_MEM_SEG2_NUM_BLOCKS) {
return FLASH_MEM_SEG2_START_ADDR + (block - FLASH_MEM_SEG1_NUM_BLOCKS) * FLASH_BLOCK_SIZE;
}
// can add more flash segments here if needed, following above pattern
// bad block
return -1;
}
static void flash_bdev_irq_handler(void) {
if (!(flash_flags & FLASH_FLAG_DIRTY)) {
return;
}
// This code uses interrupts to erase the flash
/*
if (flash_erase_state == 0) {
flash_erase_it(flash_cache_sector_start, flash_cache_sector_size / 4);
flash_erase_state = 1;
return;
}
if (flash_erase_state == 1) {
// wait for erase
// TODO add timeout
#define flash_erase_done() (__HAL_FLASH_GET_FLAG(FLASH_FLAG_BSY) == RESET)
if (!flash_erase_done()) {
return;
}
flash_erase_state = 2;
}
*/
// This code erases the flash directly, waiting for it to finish
if (!(flash_flags & FLASH_FLAG_ERASED)) {
flash_erase(flash_cache_sector_start, flash_cache_sector_size / 4);
flash_flags |= FLASH_FLAG_ERASED;
return;
}
// If not a forced write, wait at least 5 seconds after last write to flush
// On file close and flash unmount we get a forced write, so we can afford to wait a while
if ((flash_flags & FLASH_FLAG_FORCE_WRITE) || HAL_GetTick() - flash_tick_counter_last_write >= 5000) {
// sync the cache RAM buffer by writing it to the flash page
flash_write(flash_cache_sector_start, (const uint32_t*)CACHE_MEM_START_ADDR, flash_cache_sector_size / 4);
// clear the flash flags now that we have a clean cache
flash_flags = 0;
// indicate a clean cache with LED off
led_state(PYB_LED_RED, 0);
}
}
bool flash_bdev_readblock(uint8_t *dest, uint32_t block) {
// non-MBR block, get data from flash memory, possibly via cache
uint32_t flash_addr = convert_block_to_flash_addr(block);
if (flash_addr == -1) {
// bad block number
return false;
}
uint8_t *src = flash_cache_get_addr_for_read(flash_addr);
memcpy(dest, src, FLASH_BLOCK_SIZE);
return true;
}
bool flash_bdev_writeblock(const uint8_t *src, uint32_t block) {
// non-MBR block, copy to cache
uint32_t flash_addr = convert_block_to_flash_addr(block);
if (flash_addr == -1) {
// bad block number
return false;
}
uint8_t *dest = flash_cache_get_addr_for_write(flash_addr);
memcpy(dest, src, FLASH_BLOCK_SIZE);
return true;
}
#endif // MICROPY_HW_ENABLE_INTERNAL_FLASH_STORAGE